PART |
Description |
Maker |
MC-4516DA726EFC-A10 MC-4516DA726EFC-A80 MC-4516DA7 |
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
Elpida Memory, Inc.
|
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M x 72 Bit ECC DRAM Module unbuffered 4M x 64 Bit DRAM Module unbuffered 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组 GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44 16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44 Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50 DB25PH 16兆位同步DRAM 16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group SIEMENS AG
|
MC-4532DA726EFB-A10 MC-4532DA726EFB-A80 MC-4532DA7 |
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
Elpida Memory, Inc. http://
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42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM 256Mb (2MBank2) Synchronous DRAM 256Mb的(200万?4Bank2)同步DRAM 256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
HYB39L256160AC-7.5 HYB39L256160AT-7.5 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
K4S160822DT-G/F10 K4S160822DT-G/F7 K4S160822D K4S1 |
2M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO44 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MT9LSDT872G-133 MT9LSDT872G-13E MT9LSDT1672G-133 M |
SYNCHRONOUS DRAM MODULE
|
Micron Technology, Inc.
|